Samsung Electronics Showcases Disruptive Next-Gen 3D DRAM Tech, Launch Aimed at 2025+

There had been some quietness in the DRAM industry for the past few quarters, and apparently, companies were busy combating the strict financial condition they were in amid high inventory levels and low consumer demand.

Now that the situation has improved, the focus has finally been shifted to next-gen R&D, and this time, Samsung has come up with its very own 3D DRAM implementation, which is expected to come into effect within the following year.

Based on the presentation slides surfacing up, the DRAM industry is moving into sub-10nm compress lines. To break the deadlock present in innovating modern DRAM technologies, Samsung plans to introduce two new methods, called Vertical Channel Transistors and Stacked DRAM, with both of them involving differences in the positioning of components, which ultimately reduces the device area occupation, in turn ensuring higher performance.

Similarly, to increase memory capacities, Samsung plans on utilizing the stacked DRAM concept, which allows the firm to achieve a higher storage-to-area ratio, thus increasing chip capacities to potentially 100 GB moving into the future. With that said, it is predicted that 3D DRAM markets could grow up to $100 billion by 2028, and by the looks of it, Samsung is relatively early with its developments, which could mean that the Korean giant leads the DRAM industry moving into the future, but that is early to say for now.